Designs of blue and green light-emitting diodes based on type-II InGaN-ZnGeN2 quantum wells
نویسندگان
چکیده
منابع مشابه
Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns
In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output p...
متن کاملLight-emitting-diodes based on ordered InGaN nanocolumns emitting in the blue, green and yellow spectral range.
The growth of ordered arrays of InGaN/GaN nanocolumnar light emitting diodes by molecular beam epitaxy, emitting in the blue (441 nm), green (502 nm), and yellow (568 nm) spectral range is reported. The device active region, consisting of a nanocolumnar InGaN section of nominally constant composition and 250 to 500 nm length, is free of extended defects, which is in strong contrast to InGaN (pl...
متن کاملHigh-brightness II–VI light-emitting diodes grown by molecular-beam epitaxy on ZnSe substrates
High-brightness blue and green light-emitting diodes ~LEDs! based on II–VI double heterostructures ~DHs! have been successfully grown by molecular-beam epitaxy ~MBE! on ~100! ZnSe substrates. These LED structures consist of a 500–1000 Å thick active region of undoped blue-emitting Zn0.9Cd0.1Se/ZnSe multiple quantum wells or a green-emitting ZnTe0.1Se0.9 single quantum well sandwiched between a ...
متن کاملPhosphor-Free Apple-White LEDs with Embedded Indium-Rich Nanostructures Grown on Strain Relaxed Nano-epitaxy GaN
Phosphor-free apple-white light emitting diodes have been fabricated using a dual stacked InGaN/GaN multiple quantum wells comprising of a lower set of long wavelength emitting indium-rich nanostructures incorporated in multiple quantum wells with an upper set of cyan-green emitting multiple quantum wells. The light-emitting diodes were grown on nano-epitaxially lateral overgrown GaN template f...
متن کاملEffects of In profile on simulations of InGaN/GaN multi-quantum-well light-emitting diodes
Articles you may be interested in Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thickness Three dimensional numerical study on the efficiency of a core-shell InGaN/GaN multiple quantum well nanowire light-emitting diodes Effect of an electron blocking layer on the piezoelectric field in InGaN/GaN multiple...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2016